GaAsSb/InAlAs/InGaAs Tunnel Diodes for Millimeter Wave Detection in 220–330-GHz Band

Abstract

We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> mesa devices at room temperature. Measured current-voltage characteristics revealed a superior temperature stability of the devices compared with Schottky barrier diodes. The expected sensitivity variations over a temperature range from T=17-300 K are 1.7 dB.