MBE growth of graded index AlGaInAs MQW lasers on InP

1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

H. Temkin, K. Alavi, W. R. Wagner et al. · Applied Physics Letters · 1983 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

J. P. Praseuth, M. C. Joncour, Jean‐Michel Gérard et al. · Journal of Applied Physics · 1988 · 39 citations

Natural Sciences, Materials Science, Physics +17

Very low threshold current density SCH-MQW laser diodes emitting at 1.55µm

R.W. Glew, B. Garrett, P.D. Greene · Electronics Letters · 1989 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics

H. Temkin, T. Tanbun-Ek, R. A. Logan et al. · Applied Physics Letters · 1990 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

C. Kazmierski, M. Blez, M. Quillec et al. · Electronics Letters · 1990 · 23 citations

Engineering, Electrical Engineering, Materials Science +17