Transparent gate silicon photodetectors

Abstract

Optical and electrical properties of silicon imaging devices with In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> -SnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gates are reported. The optically transparent electrically conducting films were sputtered from both glass and metal targets. Quantum efficiencies of such devices are significantly better than photodiodes or polysilicon gate devices. The electrical properties such as dark current and interface state density are as low as conventional aluminum gate devices after appropriate anneals.