Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A systematic study on the switching mechanism of an <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$</tex></formula> (PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide <formula formulatype="inline"><tex Notation="TeX">$(\hbox{AlO}_{x})$</tex></formula>. Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution of <formula formulatype="inline"><tex Notation="TeX">$\hbox{AlO}_{x}$</tex></formula>. Some basic memory characteristics, such as good cycle endurance and data retention of up to <formula formulatype="inline"><tex Notation="TeX"> $\hbox{10}^{4}$</tex></formula> s at 125 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}$</tex></formula>, were also obtained. It also showed excellent switching uniformity and high device yield. </para>