Diode forward and reverse recovery model for power electronic SPICE simulations

Abstract

A pn-diode micro-model representing forward and reverse recovery phenomena for power electronic simulation, especially simulations using SPICE2 is presented. The model is proposed to compensate the incompleteness of the diode model in current circuit simulation packages. In the forward recovery submodel, the diode bulk resistance modulation and its forward current dependence are included. In the reverse recovery submodel, the charge control equation for excess storage carriers is employed to simulate the detailed behavior. A procedure is described for extracting the model's physical parameters from data sheet information. The model is verified by a comparison of experimental results for several different tests with SPICE simulations. A discussion is given of extending the applicability of the micro-model to the simulation of p-i-n diode behaviour.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>