Japanese Journal of Applied Physics · 1999 · 10 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAtomic Force MicroscopyNanoelectronicsQuantum DotsQuantum TunnelingSemiconductor HeterostructuresSemiconductor PhysicsCoulomb Blockade TunnelingElectron Transport In NanostructuresHeterojunction DevicesMolecular Beam EpitaxyTunnel DiodesTunnel JunctionsTunneling PhenomenaTwo-dimensional Electron Gases
We have fabricated and investigated the fundamental electron transport properties of a two-terminal tunnel diode, which consisted of a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometer-scale oxides locally generated by using an atomic force microscope (AFM). The AFM-generated oxides were adopted successfully as integral tunnel barriers for electron transport, and single electron transport and Coulomb blockade regimes were observed in a quantum dot tunnel diode structure.
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Kazuhiko Matsumoto, Masashi Ishii, Kazuhito Segawa et al. · Applied Physics Letters · 1996 · 393 citations
Natural Sciences, Materials Engineering, Materials Science +17
Overview of nanoelectronic devices
David Goldhaber‐Gordon, Michael S. Montemerlo, J. Christopher Love et al. · Proceedings of the IEEE · 1997 · 354 citations
Engineering, Computer Engineering, Electrical Engineering +16