Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

TLDR

The technique uses field‑emitted electrons from the STM tip to locally desorb hydrogen, converting the H‑terminated Si(100)-2×1 surface into clean silicon. The method achieves 1‑nm linewidths on a 3‑nm pitch, preserves linewidth during selective oxidation of patterned areas, and leaves surrounding H‑passivated regions intact, demonstrating its suitability for multistep lithography.

Abstract

Nanoscale patterning of the hydrogen terminated Si(100)-2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.