IEEE Transactions on Nuclear Science · 1996 · 14 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsRadiation MeasurementSemiconductor DevicesAbsorbed DoseComplementary Metal-oxide-semiconductor TechnologyLow-dose Radiation EffectsMemory DevicesMemory Subsystem DesignCell DesignMemory Circuit DesignRadiation EffectsRadiation Effects On ReliabilityRadiation Response ModelsRadiation-hard DevicesStatic Random-access Memory DesignTotal Ionizing Dose Effects
Total-dose tests have been performed on an advanced commercial 4-Mb static RAM (SRAM) that uses thin film p-channel transistors in a six-transistor (6-T) cell design in 0.35-/spl mu/m technology. These results are compared with other results obtained on similar test structures and also with other results on commercial SRAMs using the more typical four-transistor, two-resistor (4-T) design.
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