Microwave and Optical Technology Letters · 2008 · 13 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Device SimulationMicrowave Semiconductor DevicesPower AmplifiersDoherty Power AmplifiersMicrowave Amplifier DesignMicrowave Amplifier ModelingMicrowave Circuit ModelingRadio Frequency Power Amplifiers
Abstract A Doherty amplifier's theoretical gain and efficiency characteristics significantly exceed those achieved by practical simulations and implementations. Analysis and simulation demonstrates that the FET gate voltage to drain current transfer characteristic has a significant detrimental effect on these characteristics, indicating it is the major factor in the difference between ideal and practical results. © Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1861–1864, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23477
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A New High Efficiency Power Amplifier for Modulated Waves
W.H. Doherty · Proceedings of the IRE · 1936 · 1.1K citations
GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 518 citations
Jangheon Kim, Jeonghyeon Cha, Ildu Kim et al. · IEEE Transactions on Microwave Theory and Techniques · 2005 · 218 citations
Engineering, Electrical Engineering, Microwave Engineering +16