Sulphur-induced electron accumulation on InAs: a comparison of the (001) and (111)B surfaces

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces

Munetaka Noguchi, Kazuhiko Hirakawa, T. Ikoma · Physical Review Letters · 1991 · 266 citations

Natural Sciences, Materials Science, Physics +17

The adsorption of sulfur on the (100) and (111) faces of platinum; A LEED and AES study

W. Heegemann, Konrad Meister, E. Bechtold et al. · Surface Science · 1975 · 198 citations

Natural Sciences, Chemistry, Materials Science +14

Electron-energy-loss spectroscopy of multilayered materials: Theoretical aspects and study of interface optical phonons in semiconductor superlattices

Ph. Lambin, J. P. Vigneron, A. A. Lucas · Physical review. B, Condensed matter · 1985 · 172 citations

Natural Sciences, Materials Science, Physics +16

Chalcogenide passivation of III–V semiconductor surfaces

Semiconductors · 1998 · 147 citations

Engineering, Materials Engineering, Materials Science +14