Growth and optical properties of GaN on Si(111) substrates

Emerging gallium nitride based devices

S. Noor Mohammad, A. Salvador, H. Morkoç̌ · Proceedings of the IEEE · 1995 · 614 citations

Engineering, Materials Engineering, Materials Science +17

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

Yoshinobu Nakada, Igor Aksenov, Hajime Okumura · Applied Physics Letters · 1998 · 151 citations

Engineering, Materials Engineering, Materials Science +17

Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation

In‐Hwan Lee, In-Hoon Choi, C. R. Lee et al. · Applied Physics Letters · 1997 · 111 citations

Engineering, Materials Engineering, Materials Science +17