IEEE Transactions on Microwave Theory and Techniques · 1986 · 34 citations · 18 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesNoise MeasurementSemiconductor PhysicsDevice Noise CharacterizationHeterodyne ReceiversMixers Noise AnalysisNoise GenerationNoise In High-frequency Semiconductor DevicesNoise In Semiconductor DiodesNoise Sources In Semiconductor MaterialsSemiconductor Noise
Classic work on optimized heterodyne receivers has concentrated on the network aspects of mixers with limited emphasis on device properties. We present experimental results of GaAs Schottky-barrier diode noise measurements in the frequency range from 0.1 to 88 GHz and a detailed analysis of noise generation in these diodes which can explain the observed current and frequency dependence.
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