IEEE Transactions on Electron Devices · 1972 · 131 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesDevice Noise CharacterizationGainNoise CharacteristicsNoise In Field-effect TransistorsNoise In High-frequency Semiconductor DevicesNoise Sources In Semiconductor MaterialsSemiconductor NoiseTransistor Noise
The noise behavior of the GaAs Schottky-barrier gate field-effect transistor has been investigated theoretically and experimentally. It has been found that an additional noise source has to be taken into account in GaAs FET's biased in the pinchoff region: the intervalley scattering noise. This noise source has been investigated and a new transistor noise model is proposed. Measured and calculated noise figures show good agreement in the frequency range 2-10 GHz. It is shown that the influence of the intervalley scattering noise can be reduced by reducing the channel thickness, and that such devices show excellent gain and noise properties in the X band.
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Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations
P N Butcher · Reports on Progress in Physics · 1967 · 162 citations