Transient and steady-state electron transport properties of GaAs and InP

Abstract

A Monte Carlo computer technique has been used to calculate nonequilibrium electron transport properties of n-type GaAs and InP at 77 and 300 K, with and without impurity scattering. Characteristics of the electron transient, including velocity overshoot, are presented and analyzed in terms of energy and momentum relaxation times. New information about the steady-state transport properties of InP and about the electron temperatures of GaAs and InP as functions of electric field is also presented and discussed.