Concepedia

Quantitative measurement of O/Si ratios in oxygen-sputtered silicon using implant standards

Richard C. Sobers, Klaus Franzreb, Peter Williams

Applied Surface Science · 2004 · 18 citations · 4 references

DOI

Concepts

References

4

Oxygen-concentration dependence of secondary ion yield enhancement

K. Wittmaack · Surface Science · 1981 · 138 citations

, , +9

Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: new evidence from sputtering yield ratios and correlation with data obtained by other techniques

K. Wittmaack · Surface and Interface Analysis · 2000 · 25 citations

, , +13

Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards

Peter Williams, Katherine M. Stika, John Davies et al. · Nuclear Instruments and Methods in Physics Research · 1983 · 24 citations

, , +8

On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEIS

Tom Janssens, Cedric Huyghebaert, Wilfried Vandervorst et al. · Applied Surface Science · 2002 · 13 citations

, , +10