Dissociation-width-dependent radiative recombination of electrons and holes at widely split dislocations in silicon

Abstract

Resolved fine structure on the broad $D5$ photoluminescence band in silicon---recently associated with straight dislocations---gives evidence that the band is a superposition of at least eleven "line" spectra with systematic energetic positions and reaction-kinetic features. We suggest that the lines originate from the radiative recombination of electrons and holes at Shockley partial dislocations split apart by different widths.