physica status solidi (a) · 1983 · 92 citations · 12 references
EngineeringMaterials SciencePhysicsOptoelectronicsRecombinationSemiconductor MaterialsDefects In Electronic MaterialsDislocation MechanicsDislocations In SemiconductorsOptical Properties Of SemiconductorsSemiconductor DefectsSilicon MaterialsConductionConduction BandDislocation PhysicsDislocationsPhotoluminescenceRadiative RecombinationTrapsValence Band
The intensities of photoluminescence lines D1 through D4 and also of the background component that are characteristic in a dislocated silicon crystal are measured as a function of the temperature. All of them become weaker as the temperature is raised. Such behaviour is interpreted in a quantitative way with the model in which two different kinds of traps, one with a shallow level and the other with a deep level, participate in the radiative recombination process giving rise to each photoluminescence line. The shallower levels are assigned to the levels associated with hole traps that are drawn from the valence band by the deformation potential of a dislocation, and are in the range 4 to 12 meV above the top of the valence band. The deeper levels are proposed to be associated with electron traps due to the antibonding states of reconstructed bonds at the dislocation core, being located in the range 0.16 to 0.35 eV below the bottom of the conduction band.
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On the Energy Spectrum of Dislocations in Silicon
V. V. Kveder, Yu. A. Osip’yan, W. Schröter et al. · physica status solidi (a) · 1982 · 158 citations