Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering

Abstract

The combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near-surface region of intentionally contaminated Czochralski-grown silicon reslting from a conventional three-step gettering cycle.