Impurity diffusion and gettering in silicon

Abstract

These proceedings collect papers on semiconductors. Topics include impurity behavior, diffusion and oxygen in silicon. Precipitation and complexing of metals in silicon as well as their electrical activity, solubility and diffusivity. Analytical techniques for impurity mapping or detection were compared and the importance of using several analytical tools are stressed. Gettering processes are also discussed. Evidence is presented that shows gettering of Ni, Au and Fe to be governed by the availability of self interstitials in silicon. Methods of gettering metallic impurities were presented such as deposited films, implantation damage and epitaxial misfit dislocations. The role of point defects in silicon and their influence on diffusion, extrinsic defect growth and gettering is discussed. Questions addressed the relative contributions of vacancies and self-interstitials to impurity diffusion as well as their own diffusivities and concentrations. New data regarding the strain and pressure dependence of diffusion is presented, but no definitive conclusions can be made regarding the mechanisms involved. Two sessions are devoted to oxygen in silicon. Mechanisms regarding intrinsic gettering, denuded zone formation, nucleation and growth of oxygen precipitates are addressed.