Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)

Abstract

InAs quantum dots (QDs) on GaAs(100) grown by molecular-beam epitaxy were structurally characterized by ion channeling. Lattice deformation of the InAs QDs and diffusion of Ga atoms into InAs QDs were clearly observed to depend strongly on the InAs coverage. It was revealed that the diffusion is significantly enhanced when the InAs coverage is changed from 1.53 to 1.71 monolayer. During this change, lattice deformation was reduced while the average size (base diameter) of dots was decreased. These phenomena suggest that some growth process change occurred.