Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon

Abstract

Explosive crystallization of Cu implanted amorphous silicon during irradiation by a 32-ns FWHM ruby laser pulse has been studied using time-resolved reflectivity measurements and Rutherford backscattering spectrometry. From interferences in the reflectivity, the position and the velocity of the self-propagating melt have been deduced as a function of time. A maximum average velocity of 13±2 m/s has been obtained. The reflectivity behavior indicates the presence of crystalline nuclei in the melt.