Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2009 · 49 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice FabricationForward Bias CharacteristicsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesIn-situ MonitoringReal-time Optical MonitoringThermal Expansion
The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.
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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 271 citations
A. Krost, A. Dadgar · physica status solidi (a) · 2002 · 183 citations
MOVPE growth of GaN on Si(111) substrates
A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 139 citations