M. Häberlen

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

Dandan Zhu, C. McAleese, M. Häberlen et al. · Journal of Applied Physics · 2011 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

Dandan Zhu, C. McAleese, K K McLaughlin et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2009 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Dislocation movement in GaN films

M. A. Moram, Thomas C. Sadler, M. Häberlen et al. · Applied Physics Letters · 2010 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +17

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Marvin Hartwig Zoellner, Marie‐Ingrid Richard, Gilbert Chahine et al. · ACS Applied Materials & Interfaces · 2015 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Anti-phase domains in cubic GaN

Ricarda M. Kemper, T. Schupp, M. Häberlen et al. · Journal of Applied Physics · 2011 · 30 citations

Engineering, Materials Engineering, Materials Science +17