Concepedia

Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers

J. J. Coleman, P.D. Dapkus

Applied Physics Letters · 1980 · 40 citations · 16 references

DOI

Concepts

Abstract

Single-mode self-aligned GaAlAs-GaAs double-heterostructure lasers have been fabricated by metalorganic chemical vapor deposition. These devices operate at low current thresholds on a single longitudinal mode and require only a single photolithographic processing step.

References

16

GaAs–Ga1−<i>x</i>Al<i>x</i>As buried-heterostructure injection lasers

T. Tsukada · Journal of Applied Physics · 1974 · 276 citations

, , +17

Transverse mode stabilized Al&amp;lt;inf&amp;gt;x&amp;lt;/inf&amp;gt;Ga&amp;lt;inf&amp;gt;1-x&amp;lt;/inf&amp;gt;As injection lasers with channeled-substrate-planar structure

K. Aiki, M. Nakamura, T. Kuroda et al. · IEEE Journal of Quantum Electronics · 1978 · 229 citations

, , +17

Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus, N. Holonyak et al. · Applied Physics Letters · 1978 · 177 citations

, , +17

Optical waveguides in GaAs–AlGaAs epitaxial layers

R. A. Logan, F. K. Reinhart · Journal of Applied Physics · 1973 · 167 citations

, , +17

Channeled substrate buried heterostructure GaAs- (GaAl)As injection lasers

P.A. Kirkby, G.H.B. Thompson · Journal of Applied Physics · 1976 · 104 citations

, , +17