Applied Physics Letters · 2006 · 225 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsMetal OxidesOxide SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBand GapBand Gap EnergyBand Gap EngineeringEnergy Band GapIntegrated Photonic DevicesThin-film OxidesWide-bandgap OxidesZinc Oxides
A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.
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Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters · 1998 · 1.5K citations · Full text
Yungryel Ryu, Shan Zhu, D. C. Look et al. · Journal of Crystal Growth · 2000 · 466 citations
Natural Sciences, Materials Engineering, Materials Science +12
Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices
Akira Ohtomo, M. Kawasaki, I. Ohkubo et al. · Applied Physics Letters · 1999 · 384 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17