C. J. Youn - Concepedia

Author

C. J. Youn

Also Known As

C J Youn, C. J. Youn, C.-J. Youn, C.J Youn, C.J. Youn, Casey Youn, Chang-Joo Youn, Chang‐Joo Youn, Chang‐joo Youn, J.Y. Kim

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Jeonbuk National University Chosun University University of Missouri Dongshin University Seoul National University

About

C. J. Youn is an author at Jeonbuk National University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	39	2K
2	Applied Physics	21	38	2K
3	Natural Sciences	2	2	66
4	Chemical Engineering	2	2	26
5	Health Sciences	1	1	13

C. J. Youn

Publications

Citations

H-Index

Page 1

	Year	Citations
Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes Yungryel Ryu, Tae-Seok Lee, Jorge Lubguban, Applied Physics Letters Optical MaterialsEngineeringDominant Electroluminescence PeaksOptoelectronic DevicesLuminescence Property	2006	437
Wide-band gap oxide alloy: BeZnO Yung Ryel Ryu, T. S. Lee, Jorge Lubguban, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEnergy Band GapEngineering	2006	223
Excitonic ultraviolet lasing in ZnO-based light emitting devices Yungryel Ryu, Jorge Lubguban, T. S. Lee, Applied Physics Letters EngineeringLaser ApplicationsLaser MaterialZno∕bezno FilmsSemiconductor Nanostructures	2007	197
ZnO devices: Photodiodes and p-type field-effect transistors Yungryel Ryu, T. S. Lee, Jorge Lubguban, Applied Physics Letters Electrical EngineeringElectronic DevicesEngineeringPhotoelectric SensorPhotodetectors	2005	159
Optical properties of Zn-terminated ZnO bulk C. J. Youn, T. S. Jeong, Min Han, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringOptical Properties	2003	156
Raman scattering and photoluminescence of As ion-implanted ZnO single crystal T. S. Jeong, Min Han, C. J. Youn, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	2004	123
Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source Keunjoo Kim, Moon Suhk Suh, T S. Kim, Applied Physics Letters Optical MaterialsEngineeringRoom-temperature Visible PhotoluminescenceOptoelectronic DevicesChemistry	1996	47
Origin of point defects in AgInS2/GaAs epilayer obtained from photoluminescence measurement Sung Hyun You, Kunlun Hong, C. J. Youn, Journal of Applied Physics Optical MaterialsPoint DefectsEngineeringOptoelectronic DevicesSemiconductors	2001	40
Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs C. J. Youn, T. S. Jeong, Min Han, Journal of Crystal Growth Optical DegradationElectrical EngineeringOptical MaterialsEngineeringSolid-state Lighting	2003	29
Photocurrent study of the valence band splitting of AgInS2 epilayers on GaAs Kunlun Hong, Jin Wook Jeong, T. S. Jeong, Journal of Physics and Chemistry of Solids Ii-vi SemiconductorPhotoluminescenceEngineeringPhysicsOptical Properties	2003	29

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