Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Abstract

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.