Excitonic ultraviolet lasing in ZnO-based light emitting devices

Abstract

The authors have fabricated ultraviolet (UV) laser diodes based on ZnO∕BeZnO films. The devices have p-n heterojunction structures with a multiple quantum well (MQW) active layer sandwiched between guide-confinement layers. The MQW active layer comprises undoped ZnO and BeZnO, while the two guide-confinement layers were As-doped p-type ZnO∕BeZnO and Ga-doped n-type BeZnO∕ZnO films, respectively. The exciton binding energy in the MQW region is exceptionally large (263meV). Exciton-related lasing was observed by optically pumping the MQWs. ZnO∕BeZnO-based diodes showed laser action by current injection at room temperature. The lasing mechanism is inelastic exciton-exciton collision.