Applied Physics Letters · 2006 · 40 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsFourier Transform SpectroscopyOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsQuantum DotsQuantum WellsInfrared PhotodetectorsIntersubband TransitionsPhotoluminescence In Quantum WellsQuantum Dot MaterialsQuantum Dot PhotodetectorsQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsSemiconductor Quantum Dots
Interband and intersubband transitions of lateral InAs∕In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.
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High detectivity InAs quantum dot infrared photodetectors
Eui‐Tae Kim, A. Madhukar, Zhengmao Ye et al. · Applied Physics Letters · 2004 · 209 citations
Characteristics of InGaAs quantum dot infrared photodetectors
Shijie Xu, S. J. Chua, Ting Mei et al. · Applied Physics Letters · 1998 · 166 citations · Full text