Effects of temperature and carrier gas flow amount on the formation of GaN nanorods by the HVPE method

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires

Xiangfeng Duan, Charles M. Lieber · Journal of the American Chemical Society · 1999 · 800 citations

Natural Sciences, Chemistry, Materials Science +11

Surface energetics, pit formation, and chemical ordering in InGaN alloys

John E. Northrup, Lucia Romano, Jörg Neugebauer · Applied Physics Letters · 1999 · 234 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination

Song Han, Wu Jin, Daihua Zhang et al. · Chemical Physics Letters · 2004 · 173 citations

Engineering, Electrical Engineering, Materials Science +16

High-power UV InGaN/AlGaN double-heterostructure LEDs

Takashi Mukai, Daisuke Morita, Shuji Nakamura · Journal of Crystal Growth · 1998 · 152 citations

Engineering, Electrical Engineering, Materials Science +12