Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier

Abstract

An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in SILVACO.