Japanese Journal of Applied Physics · 1991 · 14 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersChemical EtchingContinuous OperationEtchingHeterostructure DevicesHeterostructure LasersOhmic ContactsPulsed OperationThreshold Current Reduction
Continuous-wave operation of a lateral current injection ridge waveguide AlGaAs/GaAs laser with a selectively doped heterostructure was achieved by mainly improving the surface ohmic contacts after chemical etching. The laser threshold current under the pulsed operation was reduced to 6.5 mA, which is about a half of the threshold current in the previous laser structure.
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Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser
Y. Suzuki, Seiji Mukai, Hidenobu Yajima et al. · Electronics Letters · 1987 · 18 citations
Engineering, Electrical Engineering, Electronic Materials +14