CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE

Abstract

Transverse junction buried heterostructure laser diodes using an MQW active layer have been successfully fabricated by an entire MOVPE. The employed MQW has five undoped GaAs wells, every thickness being 110 Å. While the barriers were undoped Al 0.3 Ga 0.7 As, each of thickness 190 Å. Further, several processes for fabricating the devices were improved. These TJ-BH MQW laser diodes displayed CW operation at room temperature with a threshold current of 9.5 mA and high uniformity of laser characteristics. Furthermore, they also exhibited extremely low capacitance, i.e., less than 0.05 pF at zero bias voltage.