Kenji Shimoyama

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

Jun Suda, Kazuki Yamaji, Yuichirou Hayashi et al. · Applied Physics Express · 2010 · 145 citations

Engineering, Electrical Engineering, Materials Science +17

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

Hiroyuki Shibata, Yoshio Waseda, Hiromichi Ohta et al. · MATERIALS TRANSACTIONS · 2007 · 145 citations · Full text

Engineering, Materials Engineering, Materials Science +17

A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits

Kenji Shimoyama, Yuichi Inoue, M. Katoh et al. · Journal of Crystal Growth · 1991 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Phase formation of Mn-doped zinc silicate in water at high-temperatures and high-pressures

Masafumi Takesue, Kenji Shimoyama, Sachiko Murakami et al. · The Journal of Supercritical Fluids · 2007 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +14

Formation of α- and β-phase Mn-doped zinc silicate in supercritical water and its luminescence properties at Si/(Zn+Mn) ratios from 0.25 to 1.25

Masafumi Takesue, Atsuko Suino, Kenji Shimoyama et al. · Journal of Crystal Growth · 2008 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +12