Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF₂ and CF₄ Mixture

Abstract

A new type of amorphous silicon-carbide film is produced by the glow discharge decomposition of an intermediate species SiF 2 , CF 4 and H 2 gas mixture. Optical band gap and photoconductive properties of this film are measured as a function of carbon content. It is found that the optical band gap can be increased up to 2.2 eV by increasing carbon content without apparent degradation of film properties such as photoconductivity and photosensitivity.