Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies

Abstract

A good Si epitaxial growth rate on Ge (111) has been achieved at substrate temperatures as low as 350 °C thanks to the use of decomposed disilane in the catalytic chemical vapor deposition (CTL-CVD) method. For substrate temperatures in the (100–200 °C) range, an exposure of the Ge (111) wafer to decomposed disilane led to the formation of an amorphous silicon film. The growth rate of this Si layer was found to be several times higher when using decomposed disilane rather than undecomposed disilane. At substrate temperatures above 400 °C, an interdiffusion of Si into Ge occurred in both cases of disilane and decomposed disilane exposures.