D. Bolmont

Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface

C.A. Sébenne, D. Bolmont, G.M. Guichar et al. · Physical review. B, Solid state · 1975 · 150 citations

Engineering, Optoelectronic Devices, Photoemission Threshold Measurements +19

Use of multilayer techniques for XPS identification of various nitrogen environments in the Si/NH3 system

J.L. Bischoff, F. Lutz, D. Bolmont et al. · Surface Science · 1991 · 122 citations

Materials Engineering, Si/nh3 System, Electrical Engineering +7

Photoemission study of ammonia dissociation on Si(100) below 700 K

E.K. Hlil, L. K�ubler, J.L. Bischoff et al. · Physical review. B, Condensed matter · 1987 · 115 citations

Engineering, Adsorption Stage, Vacuum Device +20

Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

D. Bolmont, Ping Chen, C.A. Sébenne et al. · Physical review. B, Condensed matter · 1981 · 81 citations

Materials Science, Auger Measurements, Surface Characterization +13

Si-H bond production by NH3 adsorption on Si(111): An UPS study

L. K�ubler, E.K. Hlil, D. Bolmont et al. · Surface Science · 1987 · 75 citations

Chemical Engineering, Engineering, Molecular Sieving +10