D. Bolmont - Concepedia

Author

D. Bolmont

Centre National de la Recherche Scientifique

Also Known As

Bolmont, D., Bolmont, Dominique, D Bolmont, D. BOLMONT, D. Bolmont, Dominique Bolmont, Simon, Laurent

214

Publications

3.7K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université de Haute-Alsace Laboratoire de Photochimie et d'Ingénierie Macromoléculaire Sorbonne Université Laboratoire de physique des Solides

About

D. Bolmont is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	94	2.6K
2	Applied Physics	29	86	2.4K
3	Chemistry	14	19	721
4	Natural Sciences	10	10	360
5	Chemical Engineering	3	3	180

D. Bolmont

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface C.A. Sébenne, D. Bolmont, G.M. Guichar, Physical review. B, Solid state EngineeringOptoelectronic DevicesPhotoemission Threshold MeasurementsVacuum DeviceSilicon On Insulator	1975	150
Use of multilayer techniques for XPS identification of various nitrogen environments in the Si/NH3 system J.L. Bischoff, F. Lutz, D. Bolmont, Surface Science Materials EngineeringSi/nh3 SystemElectrical EngineeringMultilayer TechniquesEngineering	1991	122
Photoemission study of ammonia dissociation on Si(100) below 700 K E.K. Hlil, L. K�ubler, J.L. Bischoff, Physical review. B, Condensed matter EngineeringAdsorption StageVacuum DeviceChemistryInitial Thermal Nitridation	1987	115
Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag D. Bolmont, Ping Chen, C.A. Sébenne, Physical review. B, Condensed matter Materials ScienceAuger MeasurementsSurface CharacterizationEngineeringPhysics	1981	81
Si-H bond production by NH3 adsorption on Si(111): An UPS study L. K�ubler, E.K. Hlil, D. Bolmont, Surface Science Chemical EngineeringEngineeringMolecular SievingSurface ChemistrySurface Science	1987	75
Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111) L. Stauffer, A. Mharchi, C. Pirri, Physical review. B, Condensed matter Materials ScienceEngineeringCrystalline DefectsPhysicsInterfacial Geometry	1993	68
Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition Mustapha Diani, Azzam N. Mansour, L. K�ubler, Diamond and Related Materials Materials ScienceChemical EngineeringCarbon Nitride CnxEngineeringBoron Nitride	1994	68
Room temperature adsorption and growth of Ga and In on cleaved Si(111) D. Bolmont, P. Chen, C.A. Sébenne, Surface Science Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics	1984	65
Structure of a two-dimensional epitaxial Er silicide on Si(111) investigated by Auger-electron diffraction P. Wetzel, C. Pirri, Pauline Paki, Physical review. B, Condensed matter Ii-vi SemiconductorEpitaxial GrowthEngineeringPhysicsOptical Properties	1993	54
Interfacial structure of two-dimensional epitaxial Er silicide on Si(111) M.-H. Tuilier, P. Wetzel, C. Pirri, Physical review. B, Condensed matter Surface CharacterizationEngineeringPhysicsSurface AnalysisSurface Science	1994	53

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