C.A. Sébenne - Concepedia

Author

C.A. Sébenne

Centre National de la Recherche Scientifique

Also Known As

C A Sebenne, C A Sébenne, C Sebenne, C Sébenne, C. A. Sebenne, C. A. SÉBENNE, C. A. Sébenne, C. SEBENNE, C. Sebenne, C. SÉbenne

151

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Laboratoire de physique des Solides Sorbonne Université Université Paris Cité Institute of Structure of Matter

About

C.A. Sébenne is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	72	2K
2	Applied Physics	24	68	1.9K
3	Chemistry	13	18	437
4	Natural Sciences	11	14	377
5	Chemical Engineering	4	4	75

C.A. Sébenne

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface C.A. Sébenne, D. Bolmont, G.M. Guichar, Physical review. B, Solid state EngineeringOptoelectronic DevicesPhotoemission Threshold MeasurementsVacuum DeviceSilicon On Insulator	1975	150
High-resolution photoemission yield and surface states in semiconductors C.A. Sébenne Il Nuovo cimento della Società italiana di fisica. B/Il Nuovo cimento B SemiconductorsEngineeringApplied PhysicsPhotoelectric MeasurementHigh-resolution Photoemission Yield	1977	101
Observation of Hollow Atoms or Ions above Insulator and Metal Surfaces Briand J.-P., S. Thuriez, Gianni Giardino, Physical Review Letters EngineeringHollow AtomsVacuum DeviceChemical DepositionDifferent Hollow Atoms	1996	85
Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag D. Bolmont, Ping Chen, C.A. Sébenne, Physical review. B, Condensed matter Materials ScienceAuger MeasurementsSurface CharacterizationEngineeringPhysics	1981	81
Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110) G.M. Guichar, C.A. Sébenne, G. Garry Physical Review Letters Ii-vi SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1976	70
Room temperature adsorption and growth of Ga and In on cleaved Si(111) D. Bolmont, P. Chen, C.A. Sébenne, Surface Science Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics	1984	65
Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy? Le Thanh Vinh, M. Eddrief, C.A. Sébenne, Journal of Crystal Growth Oxide HeterostructuresSemiconductorsEngineeringElectronic MaterialsSurface Science	1994	59
Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces Le Thanh Vinh, M. Eddrief, C.A. Sébenne, Applied Physics Letters Materials ScienceSurface CharacterizationEngineeringPhysicsSurface Chemistry	1994	55
Effects of atomic hydrogen on the surface properties of cleaved GaAs(110) O. M’hamedi, F. Proix, C.A. Sébenne Semiconductor Science and Technology EngineeringAdsorption StageChemistrySemiconductorsIi-vi Semiconductor	1987	52
Decay of hollow atoms above and below a surface J. P. Briand, Gianni Giardino, G. Borsoni, Physical Review A Materials ScienceArgon Hollow AtomsDouble Beta DecayEngineeringPhysics	1996	50

Page 1