C.A. Sébenne

Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface

C.A. Sébenne, D. Bolmont, G.M. Guichar et al. · Physical review. B, Solid state · 1975 · 150 citations

Engineering, Optoelectronic Devices, Photoemission Threshold Measurements +19

High-resolution photoemission yield and surface states in semiconductors

C.A. Sébenne · ˜Il œNuovo cimento della Società italiana di fisica. B/˜Il œNuovo cimento B · 1977 · 101 citations

Semiconductors, Engineering, Applied Physics +5

Observation of Hollow Atoms or Ions above Insulator and Metal Surfaces

Briand J.-P., S. Thuriez, Gianni Giardino et al. · Physical Review Letters · 1996 · 85 citations

Engineering, Hollow Atoms, Vacuum Device +16

Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

D. Bolmont, Ping Chen, C.A. Sébenne et al. · Physical review. B, Condensed matter · 1981 · 81 citations

Materials Science, Auger Measurements, Surface Characterization +13

Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)

G.M. Guichar, C.A. Sébenne, G. Garry · Physical Review Letters · 1976 · 70 citations

Ii-vi Semiconductor, Semiconductor Technology, Electrical Engineering +13