Deep-level energy spectroscopy in <i>p</i>-type CdTe using TSC measurements

Abstract

TSC measurements have shown the presence of up to eight deep traps in highly resistive compensated p-type CdTe, the corresponding energy levels range between 0.18 and 0.53 eV above the valence band. The effect of the barrier height has been investigated and comparison between different ways of excitation has yielded an estimation of the Fermi-level position in such a material.