Chinese Physics Letters · 1999 · 48 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsMaterials ChemistryThermal AnalysisHigh-temperature MaterialsSemiconductor PhysicsThermal Properties Of MaterialsThermal Properties Of SemiconductorsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsHeat CapacityHeat Capacity DeterminationPowder DiffractionPowder Diffraction AnalysisPowder X-ray DiffractionRietveld AnalysisRietveld Refinement
High pure wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder x-ray diffraction using the Rietveld technique. The heat capacity Cp was measured from 113 to 1073 K, which can be represented by Cp = 0.362 + 3.010 × 10-4T - 3.411 × 103T-2 - 7.791 × 10-8T2. No measurable phase transition was observed in this temperature range.
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