IEEE Transactions on Electron Devices · 2015 · 49 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsAmorphous SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsField-effect Transistor Transfer CharacteristicsGate Oxide Thickness EffectsMetal-oxide-semiconductor Field-effect Transistor ModelingOxide Thin-film TransistorsProcess Parameters
The impact of decreasing channel layer thickness on the electrical performance of RF-sputtered amorphous indium- gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) is investigated through the evaluation of drain current versus gate voltage (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ) transfer curves. For a fixed set of process parameters, it is found that the turn-on voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> (off-drain current, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sup> ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h <; 11 nm. The V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> - h trend is attributed to a large density (3.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> ) of backside surface acceptorlike traps and an enhanced density (3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) of donorlike trap states within the upper 11 nm from the backside surface. The precipitous decrease observed in I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sup> - h when h <; 11 nm is ascribed to backside surface acceptorlike traps and the closer physical proximity of the backside surface when the channel layer is ultrathin. An alteration of the sputtering process gas ratio of Ar/O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> from 9/1 to 10/0 and a reduction of the annealing temperature from 400°C to 150°C result in improved transistor performance for a h ≈ 5 nm a-IGZO TFT, characterized by V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ≈ 0 V, field-effect mobility of μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> = 9 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , subthreshold swing of S = 90 mV/decade, and drain current on-to-off ratio of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON-OFF</sup> = 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> .
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