Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs

Abstract

We investigate the degradation in current gain and low-frequency noise under reverse emitter-base (EB) stress due to hot electrons (Forward Collector stress) and hot holes (Open Collector Stress). The results show that the mechanisms for degradation by hot electrons and hot holes are different, as opposed to previous assumptions.