A model for channel hot carrier reliability degradation due to plasma damage in MOS devices

Abstract

An empirical relationship between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to the channel hot carrier lifetime (/spl tau/) of both N- and P-MOSFETs. A 10/spl times/ increase in AR results in a 7/spl times/ fall in its normalized lifetime for NMOS and a 10/spl times/ fall for the PMOS. A process constant P and a device constant D have been introduced. Process-related factors such as reactor design and process conditions are accounted for by P, while D includes the device features, such as gate-drain overlap and dielectric technology.