Raman spectroscopy determination of composition and strain in heterostructures

Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors

F. Cerdeira, C.J. Buchenauer, Fred H. Pollak et al. · Physical review. B, Solid state · 1972 · 897 citations

Natural Sciences, Materials Science, Physics +17

High-mobility Si and Ge structures

F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations

Engineering, Materials Science, Physics +17

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

T. Ghani, M Armstrong, C. Auth et al. · 2004 · 561 citations

Engineering, Computer Engineering, Electrical Engineering +17

Si/SiGe heterostructures: from material and physics to devices and circuits

Douglas J. Paul · Semiconductor Science and Technology · 2004 · 558 citations

Engineering, Materials Engineering, Materials Science +17

Light Scattering in Solids

H.G. Jerrard · Physics Bulletin · 1972 · 558 citations

Natural Sciences, Materials Science, Physics +10