Applied Physics Letters · 2008 · 112 citations · 11 references
Materials EngineeringMaterials ScienceElectrical EngineeringElectric-field-induced Resistance SwitchingEngineeringOxide ElectronicsSurface ScienceApplied PhysicsSemiconductor MaterialAl∕pr0.7ca0.3mno3 InterfacesThin FilmsResistance SwitchingMicroelectronicsElectrical Property
Well-defined metal-insulator-metal trilayered structures composed of epitaxial Pr0.7Ca0.3MnO3 insulator layers, epitaxial LaNiO3 bottom electrodes, and Al metal top electrodes were fabricated on LaAlO3 (100) substrates. The I-V characteristics of the trilayer structures show electric-field-induced resistance switching. The resistance switching ratio of the heterostructures was up to 100 when positive and negative pulsed voltages were applied. Detailed I-V analysis indicates the importance of both trap-controlled space-charge-limited current and Poole–Frenkel effect in resistance switching at Al∕Pr0.7Ca0.3MnO3 interfaces.
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Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Materials Science, Non-volatile Memory, Electrical Engineering +13