Journal of Applied Physics · 2009 · 111 citations · 23 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsThin FilmsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsCrystal GrowthCrystallization ProcessesDopingAmorphous Semiconductor FilmsAmorphous Thin FilmsCrystallizationCrystallization KineticsDoping BehaviorImpurity Effects On CrystallizationLaser HeatingPulsed Heating
The crystallization of amorphous Ge2Sb2Te5 (GST) doped with nitrogen is studied with pulsed laser heating. The crystallization time of sputter-deposited films is increased by doping by as much as 100× for nitrogen concentrations of the order of 12 at. % in as-deposited amorphous films. Suppression of the formation of critical crystal nuclei is found to be responsible. The crystallization of melt-quenched amorphous material is also slowed by doping but less dramatically.
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Laser induced crystallization of amorphous Ge2Sb2Te5 films
V. Weidenhof, I. Friedrich, S. Ziegler et al. · Journal of Applied Physics · 2001 · 320 citations