Delaminations of Thin Layers by High Dose Hydrogen Ion Implantation in Silicon: Formation of Thin Silicon on Insulator Silicon Layers

Abstract

The delamination of a thin layer from a Si wafer by high dose implantation has been studied. This process is applicable to the manufacture of Si on insulator wafers. Hydrogen ions are implanted into (100) p‐Si through a 100 nm thick oxide layer at 100 keV with doses of 1.0 × 1016 and 1.0 × 1017 ion/cm2. The implanted layer is measured by Rutherford backscattering spectrometry aligned spectra and by cross‐sectional transmission electron microscopy after annealing. With annealing at 600°C, delamination of the Si layer, which occurred parallel to the surface, could be observed clearly at a depth of 0.85 μm for a dose of 1.0 × 1017 ion/cm2. The gap of the split Si layer is 20 ∼ 30 nm wide. The roughness of the split layer surface is 7.5 nm. Point defects at the split layer surface decreased with annealing at high temperatures.