Tomoaki Yoneda - Concepedia

Author

Tomoaki Yoneda

Ion Technology Center (Japan)

Also Known As

T Yoneda, T. Yoneda, Tomoaki YONEDA, Tomoaki Yoneda, Tomoaki Yoneda Tomoaki Yoneda, Yoneda, T.

Publications

266

Citations

H-Index

Concepts

All Affiliations

Ion Technology Center (Japan)Ritsumeikan University Fukui National College of Technology Kyushu University

About

Tomoaki Yoneda is an author at Ion Technology Center (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	158
2	Applied Physics	5	5	112
3	Materials Science	4	4	101
4	Electrical Engineering	3	3	69
5	Materials Engineering	2	2	56

Tomoaki Yoneda

Publications

179

Citations

H-Index

Page 1

	Year	Citations
Experimental evidence of improved confinement in a high-beta field-reversed configuration plasma by neutral beam injection Tomohiko Asai, Y. Suzuki, Tomoaki Yoneda, Physics of Plasmas Electrical EngineeringEngineeringExperimental EvidencePhysicsOrdinary Frc	2000	46
Recrystallization of MeV Si implanted 6H-SiC Shinsuke Harada, Manabu Ishimaru, Teruaki Motooka, Applied Physics Letters Materials ScienceMaterials EngineeringRecrystallized LayerRecrystallized LayersMev Si3+ Ion	1996	33
Initial oxidation of 6H–SiC()- surface studied by ion scattering combined with photoemission induced by synchrotron-radiation-light Yasushi Hoshino, Tomoaki Nishimura, Tomoaki Yoneda, Surface Science Materials ScienceSurface CharacterizationEngineeringOxidation ResistanceSurface Analysis	2002	33
Amorphization and solid phase epitaxy of high-energy ion implanted 6H-SiC Manabu Ishimaru, Shinsuke Harada, Teruaki Motooka, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceMaterials EngineeringSemiconductor TechnologyEngineeringApplied Physics	1997	23
Graphene on SiC(0001) and SiC(0001) surfaces grown via Ni-silicidation reactions Tomoaki Yoneda, M. Shibuya, Kei Mitsuhara, Surface Science	2010	21
Delaminations of Thin Layers by High Dose Hydrogen Ion Implantation in Silicon: Formation of Thin Silicon on Insulator Silicon Layers Tohru Hara, Takayuki Onda, Yasuo Kakizaki, Journal of The Electrochemical Society Point DefectsEngineeringIntegrated CircuitsSilicon On InsulatorThin Silicon	1996	12
High power heating results on JT-60 Masato Akiba, Hiroshi Aikawa, N. Akaoka, Plasma Physics and Controlled Fusion EngineeringEnergy EfficiencyFusion ProductPlasma SciencePlasma Physics	1988	11

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