Carrier-enhanced ferromagnetism in Ge1−xMnxTe

Abstract

We have studied the dependence of magnetic properties on the carrier concentration of IV–VI diluted magnetic semiconductor Ge1−xMnxTe prepared by ionized-cluster beam technique. With increasing carrier concentration, the magnetic properties drastically change; saturation magnetization increases and coercive field decreases in hysteresis loop, and the Curie temperature increases. These results obviously show carrier-enhanced ferromagnetic order. The similar effect is also observed in magnetoresistance behavior.