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Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
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14
References
2001
Year
Magnetic PropertiesEngineeringChemistryMagnetic MaterialsMagnetoresistanceMagnetismRoom-temperature FerromagnetismDilute Magnetic SemiconductorsMagnetic Thin FilmsMagnetic Domain StructureMaterials ScienceNanotechnologyOxide ElectronicsLayered MaterialMagnetic MaterialTransition Metal ChalcogenidesSpintronicsFerromagnetismSolid SolubilityNatural SciencesApplied PhysicsCondensed Matter PhysicsThin Films
Dilute magnetic semiconductors and wide‑gap oxide semiconductors are promising materials for magneto‑optical devices. Using a combinatorial screening of transition‑metal solubility and magnetic properties in TiO₂, the authors discovered transparent ferromagnetism in cobalt‑doped anatase thin films containing 0–8 % Co. Magnetic‑microscopy imaging shows ferromagnetic domain structure, the films remain ferromagnetic above room temperature with 0.32 μB per Co atom, and they are conductive with a 60 % positive magnetoresistance at 2 K.
Dilute magnetic semiconductors and wide gap oxide semiconductors are appealing materials for magnetooptical devices. From a combinatorial screening approach looking at the solid solubility of transition metals in titanium dioxides and of their magnetic properties, we report on the observation of transparent ferromagnetism in cobalt-doped anatase thin films with theconcentration of cobalt between 0 and 8%. Magnetic microscopy images reveal a magnetic domain structure in the films, indicating the existence of ferromagnetic long-range ordering. The materials remain ferromagnetic above room temperature with a magnetic moment of 0.32 Bohr magnetons per cobalt atom. The film is conductive and exhibits a positive magnetoresistance of 60% at 2 kelvin.
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